Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Forward Voltage Vf
1.5V
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
UL
Width
6.2mm
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Informacije o stanju skladišta trenutno nisu dostupne.
€ 10,05
€ 2,01 komadno (u pakiranju od 5) (bez PDV-a)
Standard
5
€ 10,05
€ 2,01 komadno (u pakiranju od 5) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 5 - 45 | € 2,01 | € 10,05 |
| 50 - 245 | € 1,66 | € 8,30 |
| 250 - 495 | € 1,32 | € 6,60 |
| 500+ | € 1,22 | € 6,10 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Forward Voltage Vf
1.5V
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
UL
Width
6.2mm
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.