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STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
600mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
15nC
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
6.6mm
Height
2.17mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
€ 4.750,00
€ 1,90 Each (On a Reel of 2500) (bez PDV-a)
€ 5.937,50
€ 2,375 Each (On a Reel of 2500) (s PDV-om)
2500
€ 4.750,00
€ 1,90 Each (On a Reel of 2500) (bez PDV-a)
€ 5.937,50
€ 2,375 Each (On a Reel of 2500) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
2500
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
600mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
15nC
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
6.6mm
Height
2.17mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
