Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Pin Count
16
Package Type
SO-16
Fall Time
5ns
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Series
STDRI
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
Informacije o stanju skladišta trenutno nisu dostupne.
€ 6.200,00
€ 2,48 Each (On a Reel of 2500) (bez PDV-a)
€ 7.750,00
€ 3,10 Each (On a Reel of 2500) (s PDV-om)
2500
€ 6.200,00
€ 2,48 Each (On a Reel of 2500) (bez PDV-a)
€ 7.750,00
€ 3,10 Each (On a Reel of 2500) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
2500
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Pin Count
16
Package Type
SO-16
Fall Time
5ns
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Series
STDRI
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.