Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
7A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
RoHS
Width
4.6mm
Series
Powermesh
Height
16.4mm
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 4,88
€ 2,44 komadno (u pakiranju od 2) (bez PDV-a)
Standard
2
€ 4,88
€ 2,44 komadno (u pakiranju od 2) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 2 - 18 | € 2,44 | € 4,88 |
| 20 - 98 | € 2,18 | € 4,36 |
| 100 - 198 | € 2,03 | € 4,06 |
| 200+ | € 1,81 | € 3,62 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
7A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
RoHS
Width
4.6mm
Series
Powermesh
Height
16.4mm
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
