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STMicroelectronicsMaximum Continuous Collector Current Ic
216A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
714W
Number of Transistors
2
Package Type
ECOPACK
Configuration
Single
Mount Type
Surface
Channel Type
NPN
Pin Count
9
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
4mm
Height
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
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€ 25,27
€ 25,27 komadno (bez PDV-a)
Standard
1
€ 25,27
€ 25,27 komadno (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
| količina | jedinična cijena |
|---|---|
| 1 - 9 | € 25,27 |
| 10 - 99 | € 21,86 |
| 100+ | € 19,69 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsMaximum Continuous Collector Current Ic
216A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
714W
Number of Transistors
2
Package Type
ECOPACK
Configuration
Single
Mount Type
Surface
Channel Type
NPN
Pin Count
9
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
4mm
Height
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
