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STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
200W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
JEDEC Standard JESD97
Width
15.75mm
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 109,00
€ 5,45 Each (Supplied in a Tube) (bez PDV-a)
Proizvodno pakiranje (cijev)
20
€ 109,00
€ 5,45 Each (Supplied in a Tube) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (cijev)
20
| količina | jedinična cijena | Po cijev |
|---|---|---|
| 20 - 98 | € 5,45 | € 10,90 |
| 100 - 198 | € 5,05 | € 10,10 |
| 200+ | € 4,55 | € 9,10 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
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Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
200W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
JEDEC Standard JESD97
Width
15.75mm
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
