Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
10.57 mm
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 8,54
€ 4,27 komadno (u pakiranju od 2) (bez PDV-a)
€ 10,68
€ 5,338 komadno (u pakiranju od 2) (s PDV-om)
Standard
2
€ 8,54
€ 4,27 komadno (u pakiranju od 2) (bez PDV-a)
€ 10,68
€ 5,338 komadno (u pakiranju od 2) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 2 - 8 | € 4,27 | € 8,54 |
| 10 - 18 | € 4,12 | € 8,24 |
| 20 - 48 | € 3,87 | € 7,74 |
| 50 - 98 | € 3,62 | € 7,24 |
| 100+ | € 3,58 | € 7,16 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
10.57 mm
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


