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STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
95A
Maximum Drain Source Voltage Vds
80V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
6.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Maximum Power Dissipation Pd
127W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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PRIDRUŽITE SE BESPLATNO
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Informacije o stanju skladišta trenutno nisu dostupne.
€ 5.670,00
€ 1,89 Each (On a Reel of 3000) (bez PDV-a)
3000
€ 5.670,00
€ 1,89 Each (On a Reel of 3000) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
3000
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
95A
Maximum Drain Source Voltage Vds
80V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
6.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Maximum Power Dissipation Pd
127W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
