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STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
30V
Package Type
PowerFLAT
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
25mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
50W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
4.5nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Height
0.95mm
Length
6.2mm
Standards/Approvals
No
Width
5.1mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Detalji o proizvodu
This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
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€ 12,90
€ 1,29 komadno (u pakiranju od 10) (bez PDV-a)
Standard
10
€ 12,90
€ 1,29 komadno (u pakiranju od 10) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 10 - 90 | € 1,29 | € 12,90 |
| 100 - 490 | € 0,87 | € 8,70 |
| 500+ | € 0,74 | € 7,40 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
30V
Package Type
PowerFLAT
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
25mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
50W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
4.5nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Height
0.95mm
Length
6.2mm
Standards/Approvals
No
Width
5.1mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Detalji o proizvodu
This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
