Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Package Type
SOT-223
Series
STN6N60M2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
6W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
1.8mm
Length
6.8mm
Standards/Approvals
No
Width
6.48mm
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Informacije o stanju skladišta trenutno nisu dostupne.
€ 1.640,00
€ 0,41 Each (On a Reel of 4000) (bez PDV-a)
4000
€ 1.640,00
€ 0,41 Each (On a Reel of 4000) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
4000
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Package Type
SOT-223
Series
STN6N60M2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
6W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
1.8mm
Length
6.8mm
Standards/Approvals
No
Width
6.48mm
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.