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STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Series
STN6N60M2
Package Type
SOT-223
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
6W
Maximum Operating Temperature
150°C
Standards/Approvals
No
Length
6.8mm
Height
1.8mm
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
€ 1.640,00
€ 0,41 Each (On a Reel of 4000) (bez PDV-a)
€ 2.050,00
€ 0,512 Each (On a Reel of 4000) (s PDV-om)
4000
€ 1.640,00
€ 0,41 Each (On a Reel of 4000) (bez PDV-a)
€ 2.050,00
€ 0,512 Each (On a Reel of 4000) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
4000
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Series
STN6N60M2
Package Type
SOT-223
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
6W
Maximum Operating Temperature
150°C
Standards/Approvals
No
Length
6.8mm
Height
1.8mm
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
