Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
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PRIDRUŽITE SE BESPLATNO
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Informacije o stanju skladišta trenutno nisu dostupne.
€ 9,88
€ 4,94 komadno (u pakiranju od 2) (bez PDV-a)
Standard
2
€ 9,88
€ 4,94 komadno (u pakiranju od 2) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 2 - 18 | € 4,94 | € 9,88 |
| 20 - 98 | € 4,41 | € 8,82 |
| 100 - 198 | € 4,10 | € 8,20 |
| 200+ | € 3,67 | € 7,34 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
