Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
DeepGate, STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
183 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Height
15.75mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
€ 11,89
€ 11,89 komadno (bez PDV-a)
€ 14,86
€ 14,86 komadno (s PDV-om)
Standard
1
€ 11,89
€ 11,89 komadno (bez PDV-a)
€ 14,86
€ 14,86 komadno (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena |
|---|---|
| 1 - 1 | € 11,89 |
| 2+ | € 11,45 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
DeepGate, STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
183 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Height
15.75mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


