Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Series
MDmesh K6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.6Ω
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25.9nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Informacije o stanju skladišta trenutno nisu dostupne.
€ 29,50
€ 2,95 Each (Supplied in a Tube) (bez PDV-a)
Proizvodno pakiranje (cijev)
10
€ 29,50
€ 2,95 Each (Supplied in a Tube) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (cijev)
10
| količina | jedinična cijena |
|---|---|
| 10 - 99 | € 2,95 |
| 100 - 499 | € 2,75 |
| 500+ | € 2,70 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Series
MDmesh K6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.6Ω
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25.9nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.