Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Pin Count
2
Peak Reverse Current Ir
60μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
120A
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
RoHS
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.
Informacije o stanju skladišta trenutno nisu dostupne.
€ 10.880,00
€ 10,88 Each (On a Reel of 1000) (bez PDV-a)
€ 13.600,00
€ 13,60 Each (On a Reel of 1000) (s PDV-om)
1000
€ 10.880,00
€ 10,88 Each (On a Reel of 1000) (bez PDV-a)
€ 13.600,00
€ 13,60 Each (On a Reel of 1000) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
1000
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Pin Count
2
Peak Reverse Current Ir
60μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
120A
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
RoHS
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.