Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
DO-247 LL
Maximum Continuous Forward Current If
30A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
2
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1550A
Maximum Operating Temperature
175°C
Length
15.9mm
Height
41.2mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Informacije o stanju skladišta trenutno nisu dostupne.
€ 574,80
€ 19,16 komadno (u cijevi od 30) (bez PDV-a)
€ 718,50
€ 23,95 komadno (u cijevi od 30) (s PDV-om)
30
€ 574,80
€ 19,16 komadno (u cijevi od 30) (bez PDV-a)
€ 718,50
€ 23,95 komadno (u cijevi od 30) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
30
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
DO-247 LL
Maximum Continuous Forward Current If
30A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
2
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1550A
Maximum Operating Temperature
175°C
Length
15.9mm
Height
41.2mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.