Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7.5A
Maximum Drain Source Voltage Vds
60V
Package Type
SO-8
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Typical Gate Charge Qg @ Vgs
25nC
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Length
5mm
Height
1.65mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
€ 1.700,00
€ 0,68 Each (On a Reel of 2500) (bez PDV-a)
€ 2.125,00
€ 0,85 Each (On a Reel of 2500) (s PDV-om)
2500
€ 1.700,00
€ 0,68 Each (On a Reel of 2500) (bez PDV-a)
€ 2.125,00
€ 0,85 Each (On a Reel of 2500) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
2500
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7.5A
Maximum Drain Source Voltage Vds
60V
Package Type
SO-8
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Typical Gate Charge Qg @ Vgs
25nC
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Length
5mm
Height
1.65mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
