Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
69A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
38mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
400W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
185nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Informacije o stanju skladišta trenutno nisu dostupne.
€ 85,00
€ 17,00 Each (Supplied in a Tube) (bez PDV-a)
€ 106,25
€ 21,25 Each (Supplied in a Tube) (s PDV-om)
Proizvodno pakiranje (cijev)
5
€ 85,00
€ 17,00 Each (Supplied in a Tube) (bez PDV-a)
€ 106,25
€ 21,25 Each (Supplied in a Tube) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (cijev)
5
| količina | jedinična cijena |
|---|---|
| 5 - 9 | € 17,00 |
| 10+ | € 16,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
69A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
38mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
400W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
185nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.