Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
10A
Maximum Collector Emitter Voltage Vceo
50V
Package Type
SOT-223
Mount Type
Surface
Transistor Configuration
Single
Transistor Polarity
NPN
Minimum DC Current Gain hFE
100
Maximum Emitter Base Voltage VEBO
5V
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Maximum Power Dissipation Pd
1.4W
Pin Count
4
Maximum Operating Temperature
150°C
Length
6.7mm
Height
1.8mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The 2STF1550 and 2STN1550 are NPN transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Informacije o stanju skladišta trenutno nisu dostupne.
KM 35,79
KM 1,432 Each (In a Pack of 25) (bez PDV-a)
KM 41,87
KM 1,675 Each (In a Pack of 25) (s PDV-om)
Standard
25
KM 35,79
KM 1,432 Each (In a Pack of 25) (bez PDV-a)
KM 41,87
KM 1,675 Each (In a Pack of 25) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
25
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 25 - 225 | KM 1,432 | KM 35,79 |
| 250 - 600 | KM 1,298 | KM 32,44 |
| 625+ | KM 1,119 | KM 27,96 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
10A
Maximum Collector Emitter Voltage Vceo
50V
Package Type
SOT-223
Mount Type
Surface
Transistor Configuration
Single
Transistor Polarity
NPN
Minimum DC Current Gain hFE
100
Maximum Emitter Base Voltage VEBO
5V
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Maximum Power Dissipation Pd
1.4W
Pin Count
4
Maximum Operating Temperature
150°C
Length
6.7mm
Height
1.8mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The 2STF1550 and 2STN1550 are NPN transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.