Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2U
Mount Type
Chassis
Pin Count
8
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
298nC
Minimum Operating Temperature
-40°C
Forward Voltage Vf
2.9V
Maximum Operating Temperature
175°C
Transistor Configuration
3 Phase
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 794,17
KM 794,17 Each (Supplied in a Tray) (bez PDV-a)
KM 929,18
KM 929,18 Each (Supplied in a Tray) (s PDV-om)
1
KM 794,17
KM 794,17 Each (Supplied in a Tray) (bez PDV-a)
KM 929,18
KM 929,18 Each (Supplied in a Tray) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
1
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2U
Mount Type
Chassis
Pin Count
8
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
298nC
Minimum Operating Temperature
-40°C
Forward Voltage Vf
2.9V
Maximum Operating Temperature
175°C
Transistor Configuration
3 Phase
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
