Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N, Type P
Maximum Continuous Drain Current Id
9.7A
Maximum Drain Source Voltage Vds
650V
Package Type
QFN-9
Series
MASTERG
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
2nC
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
125°C
Length
9mm
Height
1mm
Standards/Approvals
RoHS, ECOPACK
Width
9mm
Automotive Standard
No
Zemlja podrijetla
Thailand
Detalji o proizvodu
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Informacije o stanju skladišta trenutno nisu dostupne.
KM 17,47
KM 17,47 Each (bez PDV-a)
KM 20,44
KM 20,44 Each (s PDV-om)
Standard
1
KM 17,47
KM 17,47 Each (bez PDV-a)
KM 20,44
KM 20,44 Each (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
| količina | Jedinična cijena |
|---|---|
| 1 - 9 | KM 17,47 |
| 10 - 24 | KM 13,69 |
| 25 - 99 | KM 13,20 |
| 100+ | KM 12,73 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N, Type P
Maximum Continuous Drain Current Id
9.7A
Maximum Drain Source Voltage Vds
650V
Package Type
QFN-9
Series
MASTERG
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
2nC
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
125°C
Length
9mm
Height
1mm
Standards/Approvals
RoHS, ECOPACK
Width
9mm
Automotive Standard
No
Zemlja podrijetla
Thailand
Detalji o proizvodu
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.