Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.5V
Maximum Power Dissipation Pd
270W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
105nC
Maximum Operating Temperature
200°C
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Height
20.15mm
Automotive Standard
No
Detalji o proizvodu
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.
Informacije o stanju skladišta trenutno nisu dostupne.
KM 46,46
KM 46,46 Each (bez PDV-a)
KM 54,36
KM 54,36 Each (s PDV-om)
Standard
1
KM 46,46
KM 46,46 Each (bez PDV-a)
KM 54,36
KM 54,36 Each (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.5V
Maximum Power Dissipation Pd
270W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
105nC
Maximum Operating Temperature
200°C
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Height
20.15mm
Automotive Standard
No
Detalji o proizvodu
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.