Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
65A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.59Ω
Channel Mode
Depletion
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
122nC
Maximum Gate Source Voltage Vgs
25V
Maximum Power Dissipation Pd
318W
Forward Voltage Vf
3.5V
Maximum Operating Temperature
200°C
Height
34.95mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 3.167,73
KM 105,591 Each (In a Tube of 30) (bez PDV-a)
KM 3.706,24
KM 123,541 Each (In a Tube of 30) (s PDV-om)
30
KM 3.167,73
KM 105,591 Each (In a Tube of 30) (bez PDV-a)
KM 3.706,24
KM 123,541 Each (In a Tube of 30) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
30
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
65A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.59Ω
Channel Mode
Depletion
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
122nC
Maximum Gate Source Voltage Vgs
25V
Maximum Power Dissipation Pd
318W
Forward Voltage Vf
3.5V
Maximum Operating Temperature
200°C
Height
34.95mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
