Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Package Type
PowerFLAT
Series
SCTL35N65G2V
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
417W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
73nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
8.1mm
Standards/Approvals
No
Width
8.1mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 138.722,57
KM 46,241 Each (On a Reel of 3000) (bez PDV-a)
KM 162.305,41
KM 54,102 Each (On a Reel of 3000) (s PDV-om)
3000
KM 138.722,57
KM 46,241 Each (On a Reel of 3000) (bez PDV-a)
KM 162.305,41
KM 54,102 Each (On a Reel of 3000) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
3000
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Package Type
PowerFLAT
Series
SCTL35N65G2V
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
417W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
73nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
8.1mm
Standards/Approvals
No
Width
8.1mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
