Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Height
4.6mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
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Informacije o stanju skladišta trenutno nisu dostupne.
KM 24,94
KM 4,989 Each (In a Pack of 5) (bez PDV-a)
KM 29,18
KM 5,837 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 24,94
KM 4,989 Each (In a Pack of 5) (bez PDV-a)
KM 29,18
KM 5,837 Each (In a Pack of 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 5 - 45 | KM 4,989 | KM 24,94 |
| 50 - 245 | KM 4,116 | KM 20,58 |
| 250 - 495 | KM 3,266 | KM 16,33 |
| 500+ | KM 3,02 | KM 15,10 |
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PRIDRUŽITE SE BESPLATNO
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Height
4.6mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
