Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Height
4.6mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Informacije o stanju skladišta trenutno nisu dostupne.
KM 24,38
KM 4,877 Each (In a Pack of 5) (bez PDV-a)
KM 28,53
KM 5,706 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 24,38
KM 4,877 Each (In a Pack of 5) (bez PDV-a)
KM 28,53
KM 5,706 Each (In a Pack of 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 5 - 45 | KM 4,877 | KM 24,38 |
| 50 - 245 | KM 4,027 | KM 20,13 |
| 250 - 495 | KM 3,177 | KM 15,88 |
| 500+ | KM 2,953 | KM 14,76 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Height
4.6mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.