Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Height
4.6mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Informacije o stanju skladišta trenutno nisu dostupne.
KM 201,34
KM 4,027 Each (Supplied on a Reel) (bez PDV-a)
KM 235,57
KM 4,712 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
50
KM 201,34
KM 4,027 Each (Supplied on a Reel) (bez PDV-a)
KM 235,57
KM 4,712 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
50
| količina | Jedinična cijena | Po kolut |
|---|---|---|
| 50 - 245 | KM 4,027 | KM 20,13 |
| 250 - 495 | KM 3,177 | KM 15,88 |
| 500+ | KM 2,953 | KM 14,76 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Height
4.6mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.