Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
MDmesh DM2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20nC
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Height
4.6mm
Length
9.35mm
Standards/Approvals
No
Width
10.4mm
Automotive Standard
No
Detalji o proizvodu
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
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PRIDRUŽITE SE BESPLATNO
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Informacije o stanju skladišta trenutno nisu dostupne.
KM 44,29
KM 8,859 Each (In a Pack of 5) (bez PDV-a)
KM 51,82
KM 10,365 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 44,29
KM 8,859 Each (In a Pack of 5) (bez PDV-a)
KM 51,82
KM 10,365 Each (In a Pack of 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 5 - 45 | KM 8,859 | KM 44,29 |
| 50 - 120 | KM 8,076 | KM 40,38 |
| 125+ | KM 6,913 | KM 34,56 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
MDmesh DM2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20nC
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Height
4.6mm
Length
9.35mm
Standards/Approvals
No
Width
10.4mm
Automotive Standard
No
Detalji o proizvodu
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
