Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
20mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
95W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
27nC
Maximum Gate Source Voltage Vgs
16V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
175°C
Height
4.6mm
Length
10.75mm
Standards/Approvals
No
Width
10.4mm
Automotive Standard
No
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 25,95
KM 5,19 Each (In a Pack of 5) (bez PDV-a)
KM 30,36
KM 6,072 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 25,95
KM 5,19 Each (In a Pack of 5) (bez PDV-a)
KM 30,36
KM 6,072 Each (In a Pack of 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 5 - 45 | KM 5,19 | KM 25,95 |
| 50 - 245 | KM 4,273 | KM 21,36 |
| 250 - 495 | KM 3,40 | KM 17,00 |
| 500+ | KM 3,132 | KM 15,66 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
20mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
95W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
27nC
Maximum Gate Source Voltage Vgs
16V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
175°C
Height
4.6mm
Length
10.75mm
Standards/Approvals
No
Width
10.4mm
Automotive Standard
No
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
