Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
15mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
135nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 17,67
KM 8,837 Each (In a Pack of 2) (bez PDV-a)
KM 20,67
KM 10,339 Each (In a Pack of 2) (s PDV-om)
Standard
2
KM 17,67
KM 8,837 Each (In a Pack of 2) (bez PDV-a)
KM 20,67
KM 10,339 Each (In a Pack of 2) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 2 - 18 | KM 8,837 | KM 17,67 |
| 20 - 98 | KM 5,57 | KM 11,14 |
| 100 - 198 | KM 4,452 | KM 8,90 |
| 200+ | KM 4,139 | KM 8,28 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
15mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
135nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
