Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
16mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
49nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
2.4mm
Standards/Approvals
No
Width
6.2mm
Length
6.6mm
Automotive Standard
No
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 37,58
KM 7,517 Each (In a Pack of 5) (bez PDV-a)
KM 43,97
KM 8,795 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 37,58
KM 7,517 Each (In a Pack of 5) (bez PDV-a)
KM 43,97
KM 8,795 Each (In a Pack of 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 5 - 45 | KM 7,517 | KM 37,58 |
| 50 - 245 | KM 4,474 | KM 22,37 |
| 250 - 495 | KM 3,289 | KM 16,44 |
| 500+ | KM 2,662 | KM 13,31 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
16mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
49nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
2.4mm
Standards/Approvals
No
Width
6.2mm
Length
6.6mm
Automotive Standard
No
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
