Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Package Type
TO-252
Series
STripFET F3
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
33.5nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Automotive Standard
AEC-Q101
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informacije o stanju skladišta trenutno nisu dostupne.
KM 246,08
KM 4,922 Each (Supplied on a Reel) (bez PDV-a)
KM 287,91
KM 5,759 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
50
KM 246,08
KM 4,922 Each (Supplied on a Reel) (bez PDV-a)
KM 287,91
KM 5,759 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
50
| količina | Jedinična cijena | Po kolut |
|---|---|---|
| 50 - 245 | KM 4,922 | KM 24,61 |
| 250 - 495 | KM 4,586 | KM 22,93 |
| 500+ | KM 4,072 | KM 20,36 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Package Type
TO-252
Series
STripFET F3
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
33.5nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Automotive Standard
AEC-Q101
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.