Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Forward Voltage Vf
1.5V
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
UL
Width
6.2mm
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
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KM 22,48
KM 4,497 Each (In a Pack of 5) (bez PDV-a)
KM 26,30
KM 5,261 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 22,48
KM 4,497 Each (In a Pack of 5) (bez PDV-a)
KM 26,30
KM 5,261 Each (In a Pack of 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 5 - 45 | KM 4,497 | KM 22,48 |
| 50 - 245 | KM 3,714 | KM 18,57 |
| 250 - 495 | KM 2,953 | KM 14,76 |
| 500+ | KM 2,729 | KM 13,65 |
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PRIDRUŽITE SE BESPLATNO
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Forward Voltage Vf
1.5V
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
UL
Width
6.2mm
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
