Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
14nC
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Length
6.6mm
Height
2.4mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
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PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 185,68
KM 3,714 Each (Supplied on a Reel) (bez PDV-a)
KM 217,25
KM 4,345 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
50
KM 185,68
KM 3,714 Each (Supplied on a Reel) (bez PDV-a)
KM 217,25
KM 4,345 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
50
| količina | Jedinična cijena | Po kolut |
|---|---|---|
| 50 - 245 | KM 3,714 | KM 18,57 |
| 250 - 495 | KM 2,953 | KM 14,76 |
| 500+ | KM 2,729 | KM 13,65 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
14nC
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Length
6.6mm
Height
2.4mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalji o proizvodu
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
