Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
58A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-3PF
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
79W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
143nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
26.7mm
Length
15.7mm
Standards/Approvals
No
Automotive Standard
No
Zemlja podrijetla
Korea, Republic Of
Detalji o proizvodu
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Informacije o stanju skladišta trenutno nisu dostupne.
KM 35,64
KM 35,64 Each (bez PDV-a)
KM 41,70
KM 41,70 Each (s PDV-om)
Standard
1
KM 35,64
KM 35,64 Each (bez PDV-a)
KM 41,70
KM 41,70 Each (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
| količina | Jedinična cijena |
|---|---|
| 1 - 9 | KM 35,64 |
| 10+ | KM 25,01 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
58A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-3PF
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
79W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
143nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
26.7mm
Length
15.7mm
Standards/Approvals
No
Automotive Standard
No
Zemlja podrijetla
Korea, Republic Of
Detalji o proizvodu
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.