Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
7A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
56W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
JEDEC JESD97
Width
4.6mm
Series
Powermesh
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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KM 171,14
KM 3,423 Each (Supplied in a Tube) (bez PDV-a)
KM 200,23
KM 4,005 Each (Supplied in a Tube) (s PDV-om)
Proizvodno pakovanje (cijev)
50
KM 171,14
KM 3,423 Each (Supplied in a Tube) (bez PDV-a)
KM 200,23
KM 4,005 Each (Supplied in a Tube) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (cijev)
50
| količina | Jedinična cijena | Po cijev |
|---|---|---|
| 50 - 245 | KM 3,423 | KM 17,11 |
| 250 - 495 | KM 2,707 | KM 13,53 |
| 500+ | KM 2,506 | KM 12,53 |
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
7A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
56W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
JEDEC JESD97
Width
4.6mm
Series
Powermesh
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
