Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
7.5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
38W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.95V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
RoHS
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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KM 15,66
KM 3,132 Each (In a Pack of 5) (bez PDV-a)
KM 18,32
KM 3,664 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 15,66
KM 3,132 Each (In a Pack of 5) (bez PDV-a)
KM 18,32
KM 3,664 Each (In a Pack of 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 5 - 45 | KM 3,132 | KM 15,66 |
| 50 - 245 | KM 2,573 | KM 12,86 |
| 250 - 495 | KM 2,058 | KM 10,29 |
| 500+ | KM 1,902 | KM 9,51 |
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
7.5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
38W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.95V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
RoHS
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
