Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
10A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Energy Rating
221mJ
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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KM 23,04
KM 2,304 Each (In a Pack of 10) (bez PDV-a)
KM 26,96
KM 2,696 Each (In a Pack of 10) (s PDV-om)
Standard
10
KM 23,04
KM 2,304 Each (In a Pack of 10) (bez PDV-a)
KM 26,96
KM 2,696 Each (In a Pack of 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 10 - 90 | KM 2,304 | KM 23,04 |
| 100 - 490 | KM 2,103 | KM 21,03 |
| 500+ | KM 1,834 | KM 18,34 |
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
10A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Energy Rating
221mJ
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
