Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
216A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
2
Maximum Power Dissipation Pd
714W
Configuration
Single
Package Type
ECOPACK
Mount Type
Surface
Channel Type
NPN
Pin Count
9
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Operating Temperature
175°C
Length
4mm
Height
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
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KM 56,69
KM 56,69 Each (bez PDV-a)
KM 66,33
KM 66,33 Each (s PDV-om)
Standard
1
KM 56,69
KM 56,69 Each (bez PDV-a)
KM 66,33
KM 66,33 Each (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
| količina | Jedinična cijena |
|---|---|
| 1 - 9 | KM 56,69 |
| 10 - 99 | KM 49,04 |
| 100+ | KM 44,16 |
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PRIDRUŽITE SE BESPLATNO
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
216A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
2
Maximum Power Dissipation Pd
714W
Configuration
Single
Package Type
ECOPACK
Mount Type
Surface
Channel Type
NPN
Pin Count
9
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Operating Temperature
175°C
Length
4mm
Height
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
