Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
40A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
283W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
RoHS
Width
5.15mm
Series
H
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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KM 25,82
KM 12,908 Each (In a Pack of 2) (bez PDV-a)
KM 30,21
KM 15,102 Each (In a Pack of 2) (s PDV-om)
Standard
2
KM 25,82
KM 12,908 Each (In a Pack of 2) (bez PDV-a)
KM 30,21
KM 15,102 Each (In a Pack of 2) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 2 - 18 | KM 12,908 | KM 25,82 |
| 20 - 98 | KM 11,521 | KM 23,04 |
| 100 - 198 | KM 10,738 | KM 21,48 |
| 200+ | KM 9,575 | KM 19,15 |
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
40A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
283W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
RoHS
Width
5.15mm
Series
H
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
