Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
80A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
375W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Operating Temperature
175°C
Length
14.8mm
Standards/Approvals
ECOPACK
Width
15.75mm
Series
V
Height
20.15mm
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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KM 564,87
KM 11,297 Each (Supplied in a Tube) (bez PDV-a)
KM 660,90
KM 13,218 Each (Supplied in a Tube) (s PDV-om)
Proizvodno pakovanje (cijev)
50
KM 564,87
KM 11,297 Each (Supplied in a Tube) (bez PDV-a)
KM 660,90
KM 13,218 Each (Supplied in a Tube) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (cijev)
50
| količina | Jedinična cijena | Po cijev |
|---|---|---|
| 50 - 120 | KM 11,297 | KM 56,49 |
| 125+ | KM 11,186 | KM 55,93 |
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
80A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
375W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Operating Temperature
175°C
Length
14.8mm
Standards/Approvals
ECOPACK
Width
15.75mm
Series
V
Height
20.15mm
Automotive Standard
No
Detalji o proizvodu
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
