Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
50A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.1V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.9mm
Height
5.1mm
Standards/Approvals
RoHS
Width
21.1mm
Series
STG
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
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PRIDRUŽITE SE BESPLATNO
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Informacije o stanju skladišta trenutno nisu dostupne.
KM 193,96
KM 6,465 Each (In a Tube of 30) (bez PDV-a)
KM 226,93
KM 7,564 Each (In a Tube of 30) (s PDV-om)
30
KM 193,96
KM 6,465 Each (In a Tube of 30) (bez PDV-a)
KM 226,93
KM 7,564 Each (In a Tube of 30) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
30
| količina | Jedinična cijena | Po cijev |
|---|---|---|
| 30 - 270 | KM 6,465 | KM 193,96 |
| 300+ | KM 6,376 | KM 191,27 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
50A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.1V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.9mm
Height
5.1mm
Standards/Approvals
RoHS
Width
21.1mm
Series
STG
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
