Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
86A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
272W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.9mm
Height
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
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Informacije o stanju skladišta trenutno nisu dostupne.
KM 39,48
KM 7,897 Each (In a Pack of 5) (bez PDV-a)
KM 46,19
KM 9,239 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 39,48
KM 7,897 Each (In a Pack of 5) (bez PDV-a)
KM 46,19
KM 9,239 Each (In a Pack of 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 5 - 45 | KM 7,897 | KM 39,48 |
| 50 - 120 | KM 7,315 | KM 36,58 |
| 125+ | KM 6,353 | KM 31,77 |
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PRIDRUŽITE SE BESPLATNO
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
86A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
272W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.9mm
Height
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
