Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STH200
Package Type
H2PAK-2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
4mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Typical Gate Charge Qg @ Vgs
93nC
Maximum Power Dissipation Pd
340W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Informacije o stanju skladišta trenutno nisu dostupne.
Cijena na upit
Each (On a Reel of 1000) (bez PDV-a)
1000
Cijena na upit
Each (On a Reel of 1000) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
1000
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STH200
Package Type
H2PAK-2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
4mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Typical Gate Charge Qg @ Vgs
93nC
Maximum Power Dissipation Pd
340W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.