Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
80V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
315W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
193nC
Maximum Gate Source Voltage Vgs
-20, +20V
Maximum Operating Temperature
175°C
Height
4.8mm
Standards/Approvals
No
Width
15.8mm
Length
10.4mm
Automotive Standard
No
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 25,32
KM 12,662 Each (In a Pack of 2) (bez PDV-a)
KM 29,63
KM 14,815 Each (In a Pack of 2) (s PDV-om)
Standard
2
KM 25,32
KM 12,662 Each (In a Pack of 2) (bez PDV-a)
KM 29,63
KM 14,815 Each (In a Pack of 2) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 2 - 18 | KM 12,662 | KM 25,32 |
| 20 - 98 | KM 11,297 | KM 22,59 |
| 100 - 198 | KM 10,514 | KM 21,03 |
| 200+ | KM 9,418 | KM 18,84 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
80V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
315W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
193nC
Maximum Gate Source Voltage Vgs
-20, +20V
Maximum Operating Temperature
175°C
Height
4.8mm
Standards/Approvals
No
Width
15.8mm
Length
10.4mm
Automotive Standard
No
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
