Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
80V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
193nC
Maximum Gate Source Voltage Vgs
20V
Maximum Power Dissipation Pd
315W
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Width
15.8mm
Automotive Standard
No
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informacije o stanju skladišta trenutno nisu dostupne.
KM 219,24
KM 10,962 Each (Supplied on a Reel) (bez PDV-a)
KM 256,51
KM 12,826 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
20
KM 219,24
KM 10,962 Each (Supplied on a Reel) (bez PDV-a)
KM 256,51
KM 12,826 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
20
| količina | Jedinična cijena | Po kolut |
|---|---|---|
| 20 - 98 | KM 10,962 | KM 21,92 |
| 100 - 198 | KM 10,291 | KM 20,58 |
| 200+ | KM 9,172 | KM 18,34 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
80V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
193nC
Maximum Gate Source Voltage Vgs
20V
Maximum Power Dissipation Pd
315W
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Width
15.8mm
Automotive Standard
No
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.