Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOT-223
Series
STN3N
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
3.3W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
10nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Height
1.6mm
Length
6.5mm
Standards/Approvals
No
Width
7mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics Power MOSFET is the latest development of STMicroelectronics unique \"Single Feature Size™\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Informacije o stanju skladišta trenutno nisu dostupne.
KM 2.952,97
KM 0,738 Each (On a Reel of 4000) (bez PDV-a)
KM 3.454,98
KM 0,864 Each (On a Reel of 4000) (s PDV-om)
4000
KM 2.952,97
KM 0,738 Each (On a Reel of 4000) (bez PDV-a)
KM 3.454,98
KM 0,864 Each (On a Reel of 4000) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
4000
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Package Type
SOT-223
Series
STN3N
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
3.3W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
10nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Height
1.6mm
Length
6.5mm
Standards/Approvals
No
Width
7mm
Automotive Standard
No
Detalji o proizvodu
The STMicroelectronics Power MOSFET is the latest development of STMicroelectronics unique \"Single Feature Size™\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.