Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
80V
Package Type
TO-220
Series
STripFET H7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
200W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
96nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 357,94
KM 7,159 Each (Supplied in a Tube) (bez PDV-a)
KM 418,79
KM 8,376 Each (Supplied in a Tube) (s PDV-om)
Proizvodno pakovanje (cijev)
50
KM 357,94
KM 7,159 Each (Supplied in a Tube) (bez PDV-a)
KM 418,79
KM 8,376 Each (Supplied in a Tube) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (cijev)
50
| količina | Jedinična cijena | Po cijev |
|---|---|---|
| 50 - 120 | KM 7,159 | KM 35,79 |
| 125+ | KM 6,152 | KM 30,76 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
80V
Package Type
TO-220
Series
STripFET H7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
200W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
96nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
