Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Output Current
18.5A
Pin Count
3
Fall Time
40ns
Package Type
TO-220
Driver Type
MOSFET
Rise Time
27ns
Minimum Supply Voltage
3V
Maximum Supply Voltage
30V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
No
Width
5.15mm
Mount Type
Through Hole
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 675,60
KM 13,512 Each (In a Tube of 50) (bez PDV-a)
KM 790,45
KM 15,809 Each (In a Tube of 50) (s PDV-om)
50
KM 675,60
KM 13,512 Each (In a Tube of 50) (bez PDV-a)
KM 790,45
KM 15,809 Each (In a Tube of 50) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
50
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Output Current
18.5A
Pin Count
3
Fall Time
40ns
Package Type
TO-220
Driver Type
MOSFET
Rise Time
27ns
Minimum Supply Voltage
3V
Maximum Supply Voltage
30V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
No
Width
5.15mm
Mount Type
Through Hole
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
