Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Series
DeepGate, STripFET
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.2mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Maximum Gate Source Voltage Vgs
-20, +20V
Maximum Operating Temperature
175°C
Width
4.6mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informacije o stanju skladišta trenutno nisu dostupne.
KM 23,27
KM 11,633 Each (In a Pack of 2) (bez PDV-a)
KM 27,23
KM 13,611 Each (In a Pack of 2) (s PDV-om)
Standard
2
KM 23,27
KM 11,633 Each (In a Pack of 2) (bez PDV-a)
KM 27,23
KM 13,611 Each (In a Pack of 2) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 2 - 18 | KM 11,633 | KM 23,27 |
| 20 - 98 | KM 10,38 | KM 20,76 |
| 100 - 198 | KM 9,664 | KM 19,33 |
| 200+ | KM 8,635 | KM 17,27 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Series
DeepGate, STripFET
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.2mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Maximum Gate Source Voltage Vgs
-20, +20V
Maximum Operating Temperature
175°C
Width
4.6mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.