Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
950V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Detalji o proizvodu
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 209,17
KM 4,183 Each (In a Tube of 50) (bez PDV-a)
KM 244,73
KM 4,894 Each (In a Tube of 50) (s PDV-om)
50
KM 209,17
KM 4,183 Each (In a Tube of 50) (bez PDV-a)
KM 244,73
KM 4,894 Each (In a Tube of 50) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
50
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
950V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Detalji o proizvodu
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
