Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Series
MDmesh K6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.6Ω
Typical Gate Charge Qg @ Vgs
25.9nC
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
No
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Informacije o stanju skladišta trenutno nisu dostupne.
KM 65,99
KM 6,60 Each (Supplied in a Tube) (bez PDV-a)
KM 77,21
KM 7,72 Each (Supplied in a Tube) (s PDV-om)
Proizvodno pakovanje (cijev)
10
KM 65,99
KM 6,60 Each (Supplied in a Tube) (bez PDV-a)
KM 77,21
KM 7,72 Each (Supplied in a Tube) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (cijev)
10
| količina | Jedinična cijena |
|---|---|
| 10 - 99 | KM 6,60 |
| 100 - 499 | KM 6,15 |
| 500+ | KM 6,04 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Series
MDmesh K6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.6Ω
Typical Gate Charge Qg @ Vgs
25.9nC
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
No
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
